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Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition Ni₈₀Fe₂₀ nanotubes with optimized spintronic functionalities prepared by atomic layer deposition On the Contact Optimization of ALD-Based MoS₂ FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance

Search 1609 plasma ALD publications by:

202 Films Compositions

272 Precursors and Plasma Gases

76 Deposition Hardwares

249 Film and Plasma Characteristics

Partitioning Electrostatic and Mechanical Domains in Nanoelectromechanical Relays

Type:

Journal

Info:

Journal of Microelectromechanical Systems, (Volume:PP, Issue: 99) Page(s):1

Date:

2014-07-22

DOI:

http://dx.doi.org/10.1109/JMEMS.2014.2335157

Author Information

Name	Institution
M. Shavezipur	Stanford University

Films

Plasma TiN

Hardware used: Unknown

Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Silicon

Keywords

NEMS, NanoElectricalMechanical Systems

Notes

PEALD TiN for nanoelectromechanical relay.
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