Publication Information

Title:
ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
Type:
Journal
Info:
ECS Transactions, 80 (3) 17-25 (2017)
Date:
2017-06-01

Author Information

Name Institution
Virginia D. WheelerU.S. Naval Research Laboratory
Travis J. AndersonU.S. Naval Research Laboratory
Shihyun AhnUniversity of Florida
David I. ShahinUniversity of Maryland
Marko J. TadjerU.S. Naval Research Laboratory
Andrew D. KoehlerU.S. Naval Research Laboratory
Karl D. HobartU.S. Naval Research Laboratory
Fan RenUniversity of Maryland
Francis J. KubU.S. Naval Research Laboratory
Aris ChristouUniversity of Florida
Charles R. Eddy, Jr.U.S. Naval Research Laboratory

Films


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Substrates

AlGaN
Si(100)

Keywords

Notes

1394