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ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
Type:
Journal
Info:
ECS Transactions, 80 (3) 17-25 (2017)
Date:
2017-06-01
Author Information
| Name | Institution |
|---|---|
| Virginia D. Wheeler | U.S. Naval Research Laboratory |
| Travis J. Anderson | U.S. Naval Research Laboratory |
| Shihyun Ahn | University of Florida |
| David I. Shahin | University of Maryland |
| Marko J. Tadjer | U.S. Naval Research Laboratory |
| Andrew D. Koehler | U.S. Naval Research Laboratory |
| Karl D. Hobart | U.S. Naval Research Laboratory |
| Fan Ren | University of Maryland |
| Francis J. Kub | U.S. Naval Research Laboratory |
| Aris Christou | University of Florida |
| Charles R. Eddy, Jr. | U.S. Naval Research Laboratory |
Films
Plasma TiN
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Substrates
| AlGaN |
| Si(100) |
Notes
| 1394 |