Fully CMOS BEOL compatible HfO2 RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized plasma enhanced atomic layer deposition (PEALD) process for TiN electrode
Type:
Journal
Info:
2011 IEEE International Interconnect Technology Conference
Date:
2011-05-08
Author Information
| Name | Institution |
|---|---|
| Y. Y. Chen | IMEC |
| L. Goux | IMEC |
| L. Pantisano | IMEC |
| Johan Swerts | IMEC |
| Christoph Adelmann | IMEC |
| S. Mertens | IMEC |
| V. V. Afanasiev | KU Leuven |
| X. P. Wang | IMEC |
| B. Govoreanu | IMEC |
| R. Degraeve | IMEC |
| S. Kubicek | IMEC |
| V. Paraschiv | IMEC |
| B. Verbrugge | IMEC |
| N. Jossart | IMEC |
| L. Altimime | IMEC |
| M. Jurczak | IMEC |
| J. Kittl | IMEC |
| Guido Groeseneken | IMEC |
| Dirk J. Wouters | IMEC |
Films
Film/Plasma Properties
Substrates
| HfO2 |
Notes
| 1365 |