Fully CMOS BEOL compatible HfO2 RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized plasma enhanced atomic layer deposition (PEALD) process for TiN electrode

Type:
Journal
Info:
2011 IEEE International Interconnect Technology Conference
Date:
2011-05-08
DOI:
http://dx.doi.org/10.1109/IITC.2011.5940299

Author Information

Name Institution
Y. Y. ChenIMEC
L. GouxIMEC
L. PantisanoIMEC
J. SwertsIMEC
Christoph AdelmannIMEC
S. MertensIMEC
V. V. AfanasievKU Leuven
X. P. WangIMEC
B. GovoreanuIMEC
R. DegraeveIMEC
S. KubicekIMEC
V. ParaschivIMEC
B. VerbruggeIMEC
N. JossartIMEC
L. AltimimeIMEC
M. JurczakIMEC
J. KittlIMEC
Guido GroesenekenIMEC
Dirk J. WoutersIMEC

Films

Plasma TiN

Hardware used: Unknown
Deposition Temperature = 360C

Film/Plasma Properties

Substrates

HfO2

Keywords

Resistance RAM

Notes

1365