
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
Type:
Conference Proceedings
Info:
2017 IEEE International Electron Devices Meeting (IEDM)
Date:
2017-12-02
Author Information
Name | Institution |
---|---|
H. Hahn | IBM Research, Zurich Research Lab |
Veeresh Deshpande | IBM Research, Zurich Research Lab |
E. Caruso | University of Udine |
S. Sant | ETH Zürich |
E. O'Connor | IBM Research, Zurich Research Lab |
Y. Baumgartner | IBM Research, Zurich Research Lab |
Marilyne Sousa | IBM Research, Zurich Research Lab |
Daniele Caimi | IBM Research, Zurich Research Lab |
A. Olziersky | IBM Research, Zurich Research Lab |
P. Palestri | University of Udine |
L. Selmi | University of Udine |
A. Schenk | ETH Zürich |
Lukas Czornomaz | IBM Research, Zurich Research Lab |
Films
Film/Plasma Properties
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
InGaAs |
Al2O3 |
HfO2 |
Notes
1146 |