A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance

Type:
Conference Proceedings
Info:
2017 IEEE International Electron Devices Meeting (IEDM)
Date:
2017-12-02
DOI:
http://dx.doi.org/10.1109/IEDM.2017.8268410

Author Information

Name Institution
H. HahnIBM Research, Zurich Research Lab
Veeresh DeshpandeIBM Research, Zurich Research Lab
E. CarusoUniversity of Udine
S. SantETH Zürich
E. O'ConnorIBM Research, Zurich Research Lab
Y. BaumgartnerIBM Research, Zurich Research Lab
Marilyne SousaIBM Research, Zurich Research Lab
Daniele CaimiIBM Research, Zurich Research Lab
A. OlzierskyIBM Research, Zurich Research Lab
P. PalestriUniversity of Udine
L. SelmiUniversity of Udine
A. SchenkETH Zürich
Lukas CzornomazIBM Research, Zurich Research Lab

Films

Plasma Al2O3

Hardware used: Unknown
Deposition Temperature Range N/A

Plasma HfO2

Hardware used: Unknown
Deposition Temperature Range N/A

Plasma TiN

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Substrates

InGaAs
Al2O3
HfO2

Notes

1146