Publication Information

Title: Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications

Type: Journal

Info: Solid-State Electronics, Volume 97, July 2014, Pages 30-37

Date: 2014-05-06

DOI: http://dx.doi.org/10.1016/j.sse.2014.04.031

Author Information

Name

Institution

University of Sao Paulo

Films

Plasma TiN using Unknown

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

DRAM Electrode

Notes

PEALD TiN for DRAM gate stack.

261



Shortcuts



© 2014-2018 plasma-ald.com