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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications
Type:
Journal
Info:
Solid-State Electronics, Volume 97, July 2014, Pages 30-37
Date:
2014-05-06
Author Information
| Name | Institution |
|---|---|
| K.R.A. Sasaki | University of Sao Paulo |
Films
Film/Plasma Properties
Substrates
Keywords
| DRAM Electrode |
Notes
| PEALD TiN for DRAM gate stack. |
| 261 |