Title: Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications
Type: Journal
Info: Solid-State Electronics, Volume 97, July 2014, Pages 30-37
Date: 2014-05-06
DOI: http://dx.doi.org/10.1016/j.sse.2014.04.031
Name
Institution
University of Sao Paulo
Characteristic
Analysis
Diagnostic
DRAM Electrode
PEALD TiN for DRAM gate stack.
261
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