Publication Information

Title:
Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications
Type:
Journal
Info:
Solid-State Electronics, Volume 97, July 2014, Pages 30-37
Date:
2014-05-06

Author Information

Name Institution
K.R.A. SasakiUniversity of Sao Paulo

Films

Plasma TiN

Hardware used: Unknown


Film/Plasma Properties

Substrates

Keywords

DRAM Electrode

Notes

PEALD TiN for DRAM gate stack.
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