Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 30, 01A103 (2012)
Date:
2011-07-20

Author Information

Name Institution
Johan SwertsIMEC
S. ArminiIMEC
L. CarbonellIMEC
Annelies DelabieIMEC
A. FranquetIMEC
S. MertensIMEC
Mihaela I. PopoviciIMEC
Marc SchaekersIMEC
T. WittersIMEC
Z. TökeiIMEC
G. BeyerIMEC
Sven Van ElshochtIMEC
V. GraveyApplied Materials
Andrew CockburnApplied Materials
K. ShahApplied Materials
Joseph AubuchonApplied Materials

Films

Plasma Ru


Plasma TiN

Hardware used: Unknown


Film/Plasma Properties

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Substrates

SiO2
TiN
TaN

Notes

666