Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method

Type:
Journal
Info:
Jpn. J. Appl. Phys. Vol. 42 (2003) pp. L414-L416
Date:
2003-02-27
DOI:
http://dx.doi.org/10.1143/JJAP.42.L414

Author Information

Name Institution
Ju Youn KimHanyang University
Yangdo KimPusan National University
Hyeongtag JeonHanyang University

Films

Plasma TiN

Hardware used: Custom
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
Where to buy precursor
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

SiO2

Notes

94