Publication Information

Title:
Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 38, 032403 (2020)
Date:
2020-02-26

Author Information

Name Institution
Igor KrylovTower Semiconductor Ltd.
Yuanshen QiTechnion-Israel Institute of Technology
Valentina KorchnoyTechnion-Israel Institute of Technology
Kamira WeinfeldTechnion-Israel Institute of Technology
Moshe EizenbergTechnion-Israel Institute of Technology
Eilam YalonTechnion-Israel Institute of Technology

Films


Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: TCR, Temperature Coefficient of Resistivity
Analysis: Four-point Probe

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Si with native oxide
SiO2

Keywords

Notes

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