Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 38, 032403 (2020)
Date:
2020-02-26
DOI:
http://dx.doi.org/10.1116/6.0000028

Author Information

Name Institution
Igor KrylovTower Semiconductor Ltd.
Yuanshen QiTechnion-Israel Institute of Technology
Valentina KorchnoyTechnion-Israel Institute of Technology
Kamira WeinfeldTechnion-Israel Institute of Technology
Moshe EizenbergTechnion-Israel Institute of Technology
Eilam YalonTechnion-Israel Institute of Technology

Films

Plasma TiN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature Range = 100-400C

Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: TCR, Temperature Coefficient of Resistivity
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Rigaku Smartlab

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku Smartlab

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Themis

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

Si with native oxide
SiO2

Notes

1466