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Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 38, 032403 (2020)
Date:
2020-02-26
Author Information
| Name | Institution |
|---|---|
| Igor Krylov | Tower Semiconductor Ltd. |
| Yuanshen Qi | Technion-Israel Institute of Technology |
| Valentina Korchnoy | Technion-Israel Institute of Technology |
| Kamira Weinfeld | Technion-Israel Institute of Technology |
| Moshe Eizenberg | Technion-Israel Institute of Technology |
| Eilam Yalon | Technion-Israel Institute of Technology |
Films
Plasma TiN
Film/Plasma Properties
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: TCR, Temperature Coefficient of Resistivity
Analysis: Four-point Probe
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| Si with native oxide |
| SiO2 |
Notes
| 1466 |