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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
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Silicon film thickness influence on enhanced dynamic threshold UTBB SOI nMOSFETs
Type:
Conference Proceedings
Info:
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)
Date:
2014-09-01
Author Information
| Name | Institution |
|---|---|
| K.R.A. Sasaki | University of Sao Paulo |
Films
Film/Plasma Properties
Substrates
Keywords
| Gate Metal |
Notes
| PEALD TiN gate electrode for MOSFETs. |
| 286 |