Silicon film thickness influence on enhanced dynamic threshold UTBB SOI nMOSFETs

Type:
Conference Proceedings
Info:
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro)
Date:
2014-09-01
DOI:
http://dx.doi.org/10.1109/SBMicro.2014.6940089

Author Information

Name Institution
K.R.A. SasakiUniversity of Sao Paulo

Films

Plasma TiN

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Keywords

Gate Metal

Notes

PEALD TiN gate electrode for MOSFETs.
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