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Publication Information

Title: Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)

Type: Conference Proceedings

Info: 2015 2nd International Conference on Chemical and Material Engineering (ICCME 2015)

Date: 2015-12-27

DOI: http://dx.doi.org/10.1051/matecconf/20163901010

Author Information

Name

Institution

A*STAR (Agency for Science, Technology and Research)

Picosun Asia

Picosun Asia

A*STAR (Agency for Science, Technology and Research)

Films

Plasma TiN using Unknown

Deposition Temperature Range = 150-350C

308103-54-0

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Unknown

Unknown

Resistivity, Sheet Resistance

Unknown

Unknown

Chemical Composition, Impurities

Unknown

Unknown

Density

Unknown

Unknown

Images

TEM, Transmission Electron Microscope

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Electron Diffraction

Unknown

Conformality, Step Coverage

TEM, Transmission Electron Microscope

Unknown

Substrates

Silicon

Keywords

Notes

480



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