Publication Information

Title: Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)

Type: Conference Proceedings

Info: 2015 2nd International Conference on Chemical and Material Engineering (ICCME 2015)

Date: 2015-12-27

DOI: http://dx.doi.org/10.1051/matecconf/20163901010

Author Information

Name

Institution

A*STAR (Agency for Science, Technology and Research)

Picosun Asia

Picosun Asia

A*STAR (Agency for Science, Technology and Research)

Films

Plasma TiN using Unknown

Deposition Temperature Range = 150-350C

308103-54-0

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

-

-

Resistivity, Sheet Resistance

-

-

Chemical Composition, Impurities

-

-

Density

-

-

Images

TEM, Transmission Electron Microscope

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Electron Diffraction

-

Conformality, Step Coverage

TEM, Transmission Electron Microscope

-

Substrates

Silicon

Keywords

Notes

480



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