Nonvolatile Capacitive Crossbar Array for In-Memory Computing

Type:
Journal
Info:
Adv. Intell. Syst. 2022, 4, 2100258
Date:
2022-01-16
DOI:
https://doi.org/10.1002/aisy.202100258

Author Information

Name Institution
Shin HurGeorgia Institute of Technology
Yuan-Chun LuoGeorgia Institute of Technology
Anni LuGeorgia Institute of Technology
Tzu-Han WangGeorgia Institute of Technology
Shaolan LiGeorgia Institute of Technology
Asif Islam KhanGeorgia Institute of Technology
Shimeng YuGeorgia Institute of Technology

Films

Plasma TiN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 250C

Plasma Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma HfZrO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
Where to buy precursor
TDMAZr, (Me2N)4Zr, [(CH3)2N]4Zr, Tetrakis(DiMethylAmido) Zirconium, Zirconium Dimethylamide
CAS#: 19756-04-8
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Substrates

SiO2

Notes

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