Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
Type:
Journal
Info:
Journal of The Electrochemical Society, 157 (10) H930-H933 (2010)
Date:
2010-06-10
Author Information
Name | Institution |
---|---|
Sanghun Jeon | Samsung Electronics Co. |
Sungho Park | Samsung Electronics Co. |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Microstructure
Analysis: XRD, X-Ray Diffraction
Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Work Function
Analysis: Kelvin Probe (SPV) Surface PhotoVoltage Measurements
Characteristic: Work Function
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Effective Oxide Charge, Qeff
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
Al2O3 |
Notes
734 |