Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications

Type:
Journal
Info:
Journal of The Electrochemical Society, 157 (10) H930-H933 (2010)
Date:
2010-06-10

Author Information

Name Institution
Sanghun JeonSamsung Electronics Co.
Sungho ParkSamsung Electronics Co.

Films

Thermal Al2O3




Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Microstructure
Analysis: XRD, X-Ray Diffraction

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Work Function
Analysis: Kelvin Probe (SPV) Surface PhotoVoltage Measurements

Characteristic: Work Function
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Effective Oxide Charge, Qeff
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Al2O3

Keywords

Notes

734