Publication Information

Title: Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition

Type: Journal

Info: Scientific Reports 7: 875 (2017)

Date: 2017-03-17

DOI: http://dx.doi.org/10.1038/s41598-017-00986-z

Author Information

Name

Institution

National Taiwan University

National Taiwan University

National Taiwan University

National Taiwan University

National Taiwan University

National Taiwan University

Films

Deposition Temperature = 300C

3275-24-9

7727-37-9

1333-74-0

Deposition Temperature = 300C

3275-24-9

7727-37-9

1333-74-0

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Resistivity, Sheet Resistance

Hall Measurements

Ecopia HMS-3000

Carrier Concentration

Hall Measurements

Ecopia HMS-3000

Thickness

Ellipsometry

Ellipso Technology Elli-SE

Extinction Coefficient

Ellipsometry

Ellipso Technology Elli-SE

Optical Absorption

Ellipsometry

Ellipso Technology Elli-SE

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

JEOL JAMP-9510F

Transistor Characteristics

Transistor Characterization

Agilent B1500A Semiconductor Device Analyzer

Substrates

SiO2

Keywords

Notes

1126



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