Publication Information

Title:
Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
Type:
Journal
Info:
Scientific Reports 7: 875 (2017)
Date:
2017-03-17

Author Information

Name Institution
Po-Hsien ChengNational Taiwan University
Chun-Yuan WangNational Taiwan University
Teng-Jan ChangNational Taiwan University
Tsung-Han ShenNational Taiwan University
Yu-Syuan CaiNational Taiwan University
Miin-Jang ChenNational Taiwan University

Films



Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements

Characteristic: Carrier Concentration
Analysis: Hall Measurements

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Extinction Coefficient
Analysis: Ellipsometry

Characteristic: Optical Absorption
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

SiO2

Keywords

Notes

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