Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition

Type:
Journal
Info:
Scientific Reports 7: 875 (2017)
Date:
2017-03-17
DOI:
http://dx.doi.org/10.1038/s41598-017-00986-z

Author Information

Name Institution
Po-Hsien ChengNational Taiwan University
Chun-Yuan WangNational Taiwan University
Teng-Jan ChangNational Taiwan University
Tsung-Han ShenNational Taiwan University
Yu-Syuan CaiNational Taiwan University
Miin-Jang ChenNational Taiwan University

Films

Plasma TiN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature = 300C

Other TiON

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements
Diagnostic: Ecopia HMS-3000

Characteristic: Carrier Concentration
Analysis: Hall Measurements
Diagnostic: Ecopia HMS-3000

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Ellipso Technology Elli-SE

Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Diagnostic: Ellipso Technology Elli-SE

Characteristic: Optical Absorption
Analysis: Ellipsometry
Diagnostic: Ellipso Technology Elli-SE

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: JEOL JAMP-9510F

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Substrates

SiO2

Notes

1126