Texture of atomic layer deposited ruthenium

Type:
Journal
Info:
Microelectronic Engineering 87 (2010) 1879-1883
Date:
2009-11-04

Author Information

Name Institution
Jan MusschootGhent University
Qi XieFudan University
Davy DeduytscheGhent University
K. De KeyserGhent University
Delphine LongrieGhent University
Jo HaemersGhent University
Sven Van den BergheSCK-CEN
Ronald L. Van MeirhaegheGhent University
J. D’HaenHasselt University
Christophe DetavernierGhent University

Films

Plasma Ru



Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Substrates

Si3N4
Silicon
TiN

Keywords

Notes

Nice table comparing crystallinity of various ALD Ru reported in the literature.
1649