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Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis
Experimental and theoretical determination of the role of ions in atomic layer annealing
Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature
Stuffing-enabled surface confinement of silanes used as sealing agents on CF4 plasma-exposed 2.0 p-OSG films
Type:
Journal
Info:
Microelectronic Engineering, Available online 10 November 2014
Date:
2014-11-03
Author Information
| Name | Institution |
|---|---|
| Yiting Sun | IMEC |
Films
Film/Plasma Properties
Substrates
Keywords
| Interconnect |
| Diffusion Barrier |
Notes
| PEALD TiN for interconnect diffusion barrier application. |
| 289 |