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Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology
Texture of atomic layer deposited ruthenium
Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET
Stuffing-enabled surface confinement of silanes used as sealing agents on CF4 plasma-exposed 2.0 p-OSG films
Type:
Journal
Info:
Microelectronic Engineering, Available online 10 November 2014
Date:
2014-11-03
Author Information
| Name | Institution |
|---|---|
| Yiting Sun | IMEC |
Films
Film/Plasma Properties
Substrates
Keywords
| Interconnect |
| Diffusion Barrier |
Notes
| PEALD TiN for interconnect diffusion barrier application. |
| 289 |