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Area-Selective Atomic Layer Deposition of Two-Dimensional WS2 Nanolayers
In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry
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Publication Information
Title:
Stuffing-enabled surface confinement of silanes used as sealing agents on CF4 plasma-exposed 2.0 p-OSG films
Type:
Journal
Info:
Microelectronic Engineering, Available online 10 November 2014
Date:
2014-11-03
Author Information
| Name | Institution |
|---|---|
| Yiting Sun | IMEC |
Films
Film/Plasma Properties
Substrates
Keywords
| Interconnect |
| Diffusion Barrier |
Notes
| PEALD TiN for interconnect diffusion barrier application. |
| 289 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |