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Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3

Type:
Journal
Info:
Materials 2020, 13, 1058
Date:
2020-02-20
DOI:
http://dx.doi.org/10.3390/ma13051058

Author Information

Name Institution
Katherine HansenBoston University
Melissa CardonaPurdue University
Amartya DuttaBoston University
Chen YangBoston University

Films

Plasma TiN

Hardware used: Aixtron Genus Stratagem 200
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature = 250C

Plasma TiN

Hardware used: Aixtron Genus Stratagem 200
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Raman Spectra
Analysis: Raman Spectroscopy
Diagnostic: Renishaw Invia Raman

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI Versaprobe II

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Discover

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Discover

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Discover

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Substrates

MgO
Si(100)

Notes

1457