Publication Information

Title: Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device

Type: Journal

Info: Applied Physics Letters 107, 183509 (2015)

Date: 2015-10-24

DOI: http://dx.doi.org/10.1063/1.4935248

Author Information

Name

Institution

University of Texas at Austin

University of Texas at Austin

University of Texas at Austin

University of Texas at Austin

Hynix Semiconductor

SEMATECH Inc.

Kyungpook National University

SEMATECH Inc.

University of Texas at Austin

Films

Deposition Temperature Range N/A

Deposition Temperature Range N/A

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Capacitance

C-V, Capacitance-Voltage Measurements

-

Interface Trap Density

C-V, Capacitance-Voltage Measurements

-

Threshold Voltage

C-V, Capacitance-Voltage Measurements

-

Threshold Voltage Shift

C-V, Capacitance-Voltage Measurements

-

Substrates

InGaAs

Keywords

Notes

Prior to ALD of dielectrics, InGaAs substrate bombarded with 20W O2 plasma.

402



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