Publication Information

Title:
Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
Type:
Journal
Info:
Applied Physics Letters 107, 183509 (2015)
Date:
2015-10-24

Author Information

Name Institution
Donghyi KohUniversity of Texas at Austin
Seung Heon ShinUniversity of Texas at Austin
Jaehyun AhnUniversity of Texas at Austin
Sushant SondeUniversity of Texas at Austin
Hyuk-Min KwonHynix Semiconductor
Tommaso OrzaliSEMATECH Inc.
Dae-Hyun KimKyungpook National University
Tae-Woo KimSEMATECH Inc.
Sanjay K. BanerjeeUniversity of Texas at Austin

Films

Other Al2O3


Other HfO2


Other TiN


Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Threshold Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Threshold Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

InGaAs

Keywords

Notes

Prior to ALD of dielectrics, InGaAs substrate bombarded with 20W O2 plasma.
402