Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
Type:
Journal
Info:
ICNNE 2016: International Conference on Nanoscience, Nanotachnology and Engineering
Date:
2016-09-29
Author Information
Name | Institution |
---|---|
D. Geringswald | Infineon Technologies AG |
B. Hintze | Qimonda |
Films
Plasma TiN
Film/Plasma Properties
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Microstructure
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Stress
Analysis: Stress Measurement
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Substrates
Silicon |
Notes
842 |