Publication Information

Title:
Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
Type:
Journal
Info:
ICNNE 2016: International Conference on Nanoscience, Nanotachnology and Engineering
Date:
2016-09-29

Author Information

Name Institution
D. GeringswaldInfineon Technologies AG
B. HintzeQimonda

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Microstructure
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Stress
Analysis: Stress Measurement

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Substrates

Silicon

Keywords

Notes

842