Publication Information

Title: Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition

Type: Journal

Info: ICNNE 2016: International Conference on Nanoscience, Nanotachnology and Engineering

Date: 2016-09-29

DOI: https://waset.org/abstracts/50360

Author Information

Name

Institution

Infineon Technologies AG

Qimonda

Films

Deposition Temperature Range = 310-400C

3275-24-9

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

XRR, X-Ray Reflectivity

Bruker D8 Discover

Density

XRR, X-Ray Reflectivity

Bruker D8 Discover

Microstructure

SEM, Scanning Electron Microscopy

Hitachi S-5200

Chemical Composition, Impurities

EDS, EDX, Energy Dispersive X-ray Spectroscopy

FEI Tecnai G2 F20 S-Twin

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

PHI 670

Stress

Stress Measurement

E+H Metrology MX 208

Resistivity, Sheet Resistance

Four-point Probe

KLA-Tencor RS100

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Substrates

Silicon

Keywords

Notes

842



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