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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
DIBL in enhanced dynamic threshold operation of UTBB SOI with different drain engineering at high temperatures
Type:
Conference Proceedings
Info:
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro)
Date:
2016-08-29
Author Information
| Name | Institution |
|---|---|
| K.R.A. Sasaki | University of Sao Paulo |
| Eddy Simoen | IMEC |
| Cor Claeys | IMEC |
| Joao Antonio Martino | University of Sao Paulo |
Films
Film/Plasma Properties
Substrates
| SiO2 |
Keywords
Notes
| 925 |