Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
Type:
Journal
Info:
Journal of The Electrochemical Society, 155 (8) H625-H632 (2008)
Date:
2008-06-27
Author Information
| Name | Institution |
|---|---|
| Pierre Caubet | STMicroelectronics |
| Tom Blomberg | ASM Microchemistry Oy |
| Rym Benaboud | STMicroelectronics |
| Christophe Wyon | Minatec |
| Elisabeth Blanquet | Grenoble-CNRS-Université Joseph Fourier |
| Jean-Pierre Gonchond | STMicroelectronics |
| Marc Juhel | STMicroelectronics |
| Philippe Bouvet | STMicroelectronics |
| Mickaël Gros-Jean | STMicroelectronics |
| Jean Michailos | STMicroelectronics |
| Claire Richard | STMicroelectronics |
| Blaise Iteprat | STMicroelectronics |
Films
Plasma TiN
Film/Plasma Properties
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Porosity
Analysis: XRR, X-Ray Reflectivity
Characteristic: Thickness
Analysis: GISAXS, Grazing Incidence Small Angle X-ray Scattering
Characteristic: Density
Analysis: GISAXS, Grazing Incidence Small Angle X-ray Scattering
Characteristic: Porosity
Analysis: GISAXS, Grazing Incidence Small Angle X-ray Scattering
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Substrates
| SiO2 |
Notes
| Best process cycle time 4.3s. |
| Non-saturating GPC vs TDMAT curve. |
| Discusses reaction mechanism. |
| 108 |