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Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient

Type:
Journal
Info:
Journal of The Electrochemical Society, 155 (8) H625-H632 (2008)
Date:
2008-06-27
DOI:
http://dx.doi.org/10.1149/1.2940306

Author Information

Name Institution
Pierre CaubetSTMicroelectronics
Tom BlombergASM Microchemistry Oy
Rym BenaboudSTMicroelectronics
Christophe WyonMinatec
Elisabeth BlanquetGrenoble-CNRS-Université Joseph Fourier
Jean-Pierre GonchondSTMicroelectronics
Marc JuhelSTMicroelectronics
Philippe BouvetSTMicroelectronics
Mickaël Gros-JeanSTMicroelectronics
Jean MichailosSTMicroelectronics
Claire RichardSTMicroelectronics
Blaise ItepratSTMicroelectronics

Films

Plasma TiN

Hardware used: ASM EmerALD
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Porosity
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Thickness
Analysis: GISAXS, Grazing Incidence Small Angle X-ray Scattering
Diagnostic: -

Characteristic: Density
Analysis: GISAXS, Grazing Incidence Small Angle X-ray Scattering
Diagnostic: -

Characteristic: Porosity
Analysis: GISAXS, Grazing Incidence Small Angle X-ray Scattering
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

SiO2

Notes

Best process cycle time 4.3s.
Non-saturating GPC vs TDMAT curve.
Discusses reaction mechanism.
108