Publication Information

Title: Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient

Type: Journal

Info: Journal of The Electrochemical Society, 155 (8) H625-H632 (2008)

Date: 2008-06-27

DOI: http://dx.doi.org/10.1149/1.2940306

Author Information

Name

Institution

STMicroelectronics

ASM Microchemistry Oy

STMicroelectronics

Minatec

Grenoble-CNRS-Université Joseph Fourier

STMicroelectronics

STMicroelectronics

STMicroelectronics

STMicroelectronics

STMicroelectronics

STMicroelectronics

STMicroelectronics

Films

Plasma TiN using ASM EmerALD

Deposition Temperature Range N/A

3275-24-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Resistivity, Sheet Resistance

Four-point Probe

-

Thickness

Ellipsometry

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Bonding States

XPS, X-ray Photoelectron Spectroscopy

-

Thickness

XRR, X-Ray Reflectivity

-

Density

XRR, X-Ray Reflectivity

-

Porosity

XRR, X-Ray Reflectivity

-

Thickness

GISAXS, Grazing Incidence Small Angle X-ray Scattering

-

Density

GISAXS, Grazing Incidence Small Angle X-ray Scattering

-

Porosity

GISAXS, Grazing Incidence Small Angle X-ray Scattering

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Conformality, Step Coverage

TEM, Transmission Electron Microscope

-

Substrates

SiO2

Keywords

DRAM Electrode

Notes

Best process cycle time 4.3s.

Non-saturating GPC vs TDMAT curve.

Discusses reaction mechanism.

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