Publication Information

Title:
Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
Type:
Journal
Info:
Journal of The Electrochemical Society, 155 (8) H625-H632 (2008)
Date:
2008-06-27

Author Information

Name Institution
Pierre CaubetSTMicroelectronics
Tom BlombergASM Microchemistry Oy
Rym BenaboudSTMicroelectronics
Christophe WyonMinatec
Elisabeth BlanquetGrenoble-CNRS-Université Joseph Fourier
Jean-Pierre GonchondSTMicroelectronics
Marc JuhelSTMicroelectronics
Philippe BouvetSTMicroelectronics
Mickaël Gros-JeanSTMicroelectronics
Jean MichailosSTMicroelectronics
Claire RichardSTMicroelectronics
Blaise ItepratSTMicroelectronics

Films


Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Porosity
Analysis: XRR, X-Ray Reflectivity

Characteristic: Thickness
Analysis: GISAXS, Grazing Incidence Small Angle X-ray Scattering

Characteristic: Density
Analysis: GISAXS, Grazing Incidence Small Angle X-ray Scattering

Characteristic: Porosity
Analysis: GISAXS, Grazing Incidence Small Angle X-ray Scattering

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope

Substrates

SiO2

Keywords

DRAM Electrode

Notes

Best process cycle time 4.3s.
Non-saturating GPC vs TDMAT curve.
Discusses reaction mechanism.
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