Transient characterization of the electroforming process in TiO2 based resistive switching devices

Type:
Journal
Info:
Applied Physics Letters 102, 023507 (2013)
Date:
2013-01-02
DOI:
http://dx.doi.org/10.1063/1.4776693

Author Information

Name Institution
Mohammad NomanCarnegie Mellon University
Abhishek A. SharmaCarnegie Mellon University
Yi Meng LuCarnegie Mellon University
Marek SkowronskiCarnegie Mellon University
Paul A. SalvadorCarnegie Mellon University
James A. BainCarnegie Mellon University

Films

Plasma TiO2

Hardware used: Unknown
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Substrates

Pt

Keywords

Resistance RAM
Resistive Switch

Notes

672