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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Transient characterization of the electroforming process in TiO2 based resistive switching devices
Type:
Journal
Info:
Applied Physics Letters 102, 023507 (2013)
Date:
2013-01-02
Author Information
| Name | Institution |
|---|---|
| Mohammad Noman | Carnegie Mellon University |
| Abhishek A. Sharma | Carnegie Mellon University |
| Yi Meng Lu | Carnegie Mellon University |
| Marek Skowronski | Carnegie Mellon University |
| Paul A. Salvador | Carnegie Mellon University |
| James A. Bain | Carnegie Mellon University |
Films
Film/Plasma Properties
Substrates
| Pt |
Keywords
| Resistance RAM |
| Resistive Switch |
Notes
| 672 |