Publication Information

Title: Transient characterization of the electroforming process in TiO2 based resistive switching devices

Type: Journal

Info: Applied Physics Letters 102, 023507 (2013)

Date: 2013-01-02

DOI: http://dx.doi.org/10.1063/1.4776693

Author Information

Name

Institution

Mohammad Noman

Carnegie Mellon University

Abhishek A. Sharma

Carnegie Mellon University

Yi Meng Lu

Carnegie Mellon University

Marek Skowronski

Carnegie Mellon University

Paul A. Salvador

Carnegie Mellon University

James A. Bain

Carnegie Mellon University

Films

Plasma TiO2 using Unknown

Deposition Temperature = 200C

TDMATi, (Me2N)4Ti, [(CH3)2N]4Ti, Tetrakis(DiMethylAmido) Titaniium, Titanium Dimethylamide

3275-24-9

Where to buy precursor

O2, Oxygen

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Pt

Keywords

Resistance RAM

Resistive Switch

Notes

672


Mark Sowa

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