The publication database currently has 1536 entries.
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Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N2 plasma for gate spacer
Continuous polymer films deposited on top of porous substrates using plasma-enhanced atomic layer deposition and molecular layer deposition
Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
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Publication Information
Title:
Long-term ambient surface oxidation of titanium oxynitride films prepared by plasma-enhanced atomic layer deposition: An XPS study
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 01A114 (2018)
Date:
2017-11-16
Author Information
| Name | Institution |
|---|---|
| Małgorzata Kot | Brandenburg University of Technology |
| Justyna Łobaza | Brandenburg University of Technology |
| Franziska Naumann | Sentech Instruments GmbH |
| Hassan Gargouri | Sentech Instruments GmbH |
| Karsten Henkel | Brandenburg University of Technology |
| Dieter Schmeißer | Brandenburg University of Technology |
Films
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Compositional Depth Profiling
Analysis: ARXPS, Angle Resolved X-ray Photoelectron Spectroscopy
Substrates
| Si(001) |
Keywords
Notes
| 1097 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |