Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode

Type:
Journal
Info:
J. Vac. Sci. Technol. A 32(1), Jan/Feb 2014, 01A120
Date:
2013-11-26

Author Information

Name Institution
John PointetCEA - LETI MINATEC
Patrice GononCEA - LETI MINATEC
Lawrence Latu-RomainCEA - LETI MINATEC
Ahmad BsiesyCEA - LETI MINATEC
Christophe ValléeCEA - LETI MINATEC

Films



Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Substrates

Pt
SiO2

Keywords

DRAM capacitor
High-k Dielectric Thin Films
PEALD Film Development

Notes

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