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In-gap states in titanium dioxide and oxynitride atomic layer deposited films
Type:
Journal
Info:
J. Vac. Sci. Technol. A 35(1), Jan/Feb 2017
Date:
2016-11-30
Author Information
| Name | Institution |
|---|---|
| Karsten Henkel | Brandenburg University of Technology |
| Chittaranjan Das | Brandenburg University of Technology |
| Małgorzata Kot | Brandenburg University of Technology |
| Dieter Schmeißer | Brandenburg University of Technology |
| Franziska Naumann | Sentech Instruments GmbH |
| Irina Kärkkänen | Sentech Instruments GmbH |
| Hassan Gargouri | Sentech Instruments GmbH |
Films
Film/Plasma Properties
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Current Density
Analysis: I-V, Current-Voltage Measurements
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Band Gap
Analysis: Valence Band Spectroscopy
Substrates
| SiO2 |
Notes
| 1155 |