Publication Information

Title:
In-gap states in titanium dioxide and oxynitride atomic layer deposited films
Type:
Journal
Info:
J. Vac. Sci. Technol. A 35(1), Jan/Feb 2017
Date:
2016-11-30

Author Information

Name Institution
Karsten HenkelBrandenburg University of Technology
Chittaranjan DasBrandenburg University of Technology
Małgorzata KotBrandenburg University of Technology
Dieter SchmeißerBrandenburg University of Technology
Franziska NaumannSentech Instruments GmbH
Irina KärkkänenSentech Instruments GmbH
Hassan GargouriSentech Instruments GmbH

Films

Thermal TiO2


Plasma TiO2


Plasma TiON


Plasma TiON


Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Current Density
Analysis: I-V, Current-Voltage Measurements

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Band Gap
Analysis: Valence Band Spectroscopy

Substrates

SiO2

Keywords

Plasma vs Thermal Comparison

Notes

1155