Publication Information

Title: In-gap states in titanium dioxide and oxynitride atomic layer deposited films

Type: Journal

Info: J. Vac. Sci. Technol. A 35(1), Jan/Feb 2017

Date: 2016-11-30

DOI: http://dx.doi.org/10.1116/1.4972247

Author Information

Name

Institution

Brandenburg University of Technology

Brandenburg University of Technology

Brandenburg University of Technology

Brandenburg University of Technology

Sentech Instruments GmbH

Sentech Instruments GmbH

Sentech Instruments GmbH

Films

Thermal TiO2 using SENTECH

Deposition Temperature = 200C

546-68-9

7732-18-5

Plasma TiO2 using SENTECH

Deposition Temperature = 200C

546-68-9

7782-44-7

Plasma TiON using SENTECH

Deposition Temperature = 200C

546-68-9

7664-41-7

Plasma TiON using SENTECH

Deposition Temperature Range = 250-350C

3275-24-9

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Capacitance

C-V, Capacitance-Voltage Measurements

Agilent 4284A LCR Meter

Leakage Current

I-V, Current-Voltage Measurements

Custom

Current Density

I-V, Current-Voltage Measurements

Custom

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Synchrotron

Band Gap

Valence Band Spectroscopy

Unknown

Substrates

SiO2

Keywords

Plasma vs Thermal Comparison

Notes

1155



Shortcuts



© 2014-2019 plasma-ald.com