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In-gap states in titanium dioxide and oxynitride atomic layer deposited films

Type:
Journal
Info:
J. Vac. Sci. Technol. A 35(1), Jan/Feb 2017
Date:
2016-11-30
DOI:
http://dx.doi.org/10.1116/1.4972247

Author Information

Name Institution
Karsten HenkelBrandenburg University of Technology
Chittaranjan DasBrandenburg University of Technology
Małgorzata KotBrandenburg University of Technology
Dieter SchmeißerBrandenburg University of Technology
Franziska NaumannSentech Instruments GmbH
Irina KärkkänenSentech Instruments GmbH
Hassan GargouriSentech Instruments GmbH

Films

Thermal TiO2

Hardware used: SENTECH
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 200C

Plasma TiO2

Hardware used: SENTECH
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Plasma TiON

Hardware used: SENTECH
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 200C

Plasma TiON

Hardware used: SENTECH
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 250-350C

Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4284A LCR Meter

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Custom

Characteristic: Current Density
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Custom

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Synchrotron

Characteristic: Band Gap
Analysis: Valence Band Spectroscopy
Diagnostic: -

Substrates

SiO2

Notes

1155