Publication Information

Title: Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors

Type: Journal

Info: Journal of Electronic Materials February 2015, Volume 44, Issue 2, pp 651-657

Date: 2014-12-10

DOI: http://dx.doi.org/10.1007/s11664-014-3554-y

Author Information

Name

Institution

Dong-Suk Han

Hanyang University

Films

Plasma Al2O3 using Unknown

Deposition Temperature Range = 33-102C

TMA, AlMe3, Trimethyl Aluminum

75-24-1

Where to buy precursor

O2, Oxygen

7782-44-7

Plasma TiO2 using Unknown

Deposition Temperature Range = 33-102C

TDMATi, (Me2N)4Ti, [(CH3)2N]4Ti, Tetrakis(DiMethylAmido) Titaniium, Titanium Dimethylamide

3275-24-9

Where to buy precursor

O2, Oxygen

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Diffusion Barrier Properties

Humidity Test

Unknown

Mobility

Unknown

Unknown

Subthreshold Swing

Unknown

Unknown

Unknown

XPS, X-ray Photoelectron Spectroscopy

Unknown

Thickness

Unknown

Unknown

Density

Unknown

Unknown

Substrates

ZnSnO (a-ZTO)

Keywords

Passivation

TFT, Thin Film Transistor

Diffusion Barrier

Notes

246


Mark Sowa

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