Title: Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
Type: Journal
Info: Journal of Electronic Materials February 2015, Volume 44, Issue 2, pp 651-657
Date: 2014-12-10
DOI: http://dx.doi.org/10.1007/s11664-014-3554-y
Name
Institution
Hanyang University
Characteristic
Analysis
Diagnostic
Diffusion Barrier Properties
Humidity Test
Unknown
Mobility
Unknown
Unknown
Subthreshold Swing
Unknown
Unknown
Unknown
XPS, X-ray Photoelectron Spectroscopy
Unknown
Thickness
Unknown
Unknown
Density
Unknown
Unknown
ZnSnO (a-ZTO)
Passivation
TFT, Thin Film Transistor
Diffusion Barrier
246
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