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Atomic layer deposited Al2O3 capping layer effect on environmentally assisted cracking in SiNx barrier films
Electrochemical Performance of Lithium-Nickel Oxide Thin Films Obtained with Use of Atomic Layer Deposition
Study of the surface species during thermal and plasma-enhanced atomic layer deposition of titanium oxide films using in situ IR-spectroscopy and in vacuo X-ray photoelectron spectroscopy
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Publication Information
Title:
Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
Type:
Journal
Info:
Journal of Electronic Materials February 2015, Volume 44, Issue 2, pp 651-657
Date:
2014-12-10
Author Information
| Name | Institution |
|---|---|
| Dong-Suk Han | Hanyang University |
Films
Film/Plasma Properties
Characteristic: Diffusion Barrier Properties
Analysis: Humidity Test
Characteristic: Mobility
Analysis: -
Characteristic: Subthreshold Swing
Analysis: -
Characteristic: Unknown
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Thickness
Analysis: -
Characteristic: Density
Analysis: -
Substrates
| ZnSnO (a-ZTO) |
Keywords
| Passivation |
| TFT, Thin Film Transistor |
| Diffusion Barrier |
Notes
| 246 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |