Publication Information

Title:
Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
Type:
Journal
Info:
Journal of Electronic Materials February 2015, Volume 44, Issue 2, pp 651-657
Date:
2014-12-10

Author Information

Name Institution
Dong-Suk HanHanyang University

Films

Plasma Al2O3


Plasma TiO2


Film/Plasma Properties

Characteristic: Diffusion Barrier Properties
Analysis: Humidity Test

Characteristic: Mobility
Analysis: -

Characteristic: Subthreshold Swing
Analysis: -

Characteristic: Unknown
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Thickness
Analysis: -

Characteristic: Density
Analysis: -

Substrates

ZnSnO (a-ZTO)

Keywords

Passivation
TFT, Thin Film Transistor
Diffusion Barrier

Notes

246