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Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
Gallium nitride thin films by microwave plasma-assisted ALD
Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
Type:
Journal
Info:
Journal of Electronic Materials February 2015, Volume 44, Issue 2, pp 651-657
Date:
2014-12-10
Author Information
| Name | Institution |
|---|---|
| Dong-Suk Han | Hanyang University |
Films
Film/Plasma Properties
Characteristic: Diffusion Barrier Properties
Analysis: Humidity Test
Characteristic: Mobility
Analysis: -
Characteristic: Subthreshold Swing
Analysis: -
Characteristic: Unknown
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Thickness
Analysis: -
Characteristic: Density
Analysis: -
Substrates
| ZnSnO (a-ZTO) |
Notes
| 246 |