Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors

Type:
Journal
Info:
Journal of Electronic Materials February 2015, Volume 44, Issue 2, pp 651-657
Date:
2014-12-10
DOI:
http://dx.doi.org/10.1007/s11664-014-3554-y

Author Information

Name Institution
Dong-Suk HanHanyang University

Films

Plasma Al2O3

Hardware used: Unknown
TMA, trimethyl aluminum, AlMe3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 33-102C

Plasma TiO2

Hardware used: Unknown
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 33-102C

Film/Plasma Properties

Characteristic: Diffusion Barrier Properties
Analysis: Humidity Test
Diagnostic: -

Characteristic: Mobility
Analysis: -
Diagnostic: -

Characteristic: Subthreshold Swing
Analysis: -
Diagnostic: -

Characteristic: Unknown
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: -
Diagnostic: -

Characteristic: Density
Analysis: -
Diagnostic: -

Substrates

ZnSnO (a-ZTO)

Keywords

Passivation
TFT, Thin Film Transistor
Diffusion Barrier

Notes

246