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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
Type:
Journal
Info:
Journal of Electronic Materials February 2015, Volume 44, Issue 2, pp 651-657
Date:
2014-12-10
Author Information
| Name | Institution |
|---|---|
| Dong-Suk Han | Hanyang University |
Films
Film/Plasma Properties
Characteristic: Diffusion Barrier Properties
Analysis: Humidity Test
Characteristic: Mobility
Analysis: -
Characteristic: Subthreshold Swing
Analysis: -
Characteristic: Unknown
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Thickness
Analysis: -
Characteristic: Density
Analysis: -
Substrates
| ZnSnO (a-ZTO) |
Keywords
| Passivation |
| TFT, Thin Film Transistor |
| Diffusion Barrier |
Notes
| 246 |