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Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
Plasma enhanced atomic layer deposition of thin film Li1+xMn2-xO4 for realization of all solid-state 3D lithium-ion microbatteries
AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
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Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
Type:
Journal
Info:
Journal of Electronic Materials February 2015, Volume 44, Issue 2, pp 651-657
Date:
2014-12-10
Author Information
| Name | Institution |
|---|---|
| Dong-Suk Han | Hanyang University |
Films
Film/Plasma Properties
Characteristic: Diffusion Barrier Properties
Analysis: Humidity Test
Characteristic: Mobility
Analysis: -
Characteristic: Subthreshold Swing
Analysis: -
Characteristic: Unknown
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Thickness
Analysis: -
Characteristic: Density
Analysis: -
Substrates
| ZnSnO (a-ZTO) |
Keywords
| Passivation |
| TFT, Thin Film Transistor |
| Diffusion Barrier |
Notes
| 246 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |