Optimization of Al2O3/TiO2 nanolaminate thin films prepared with different oxide ratios, for use in organic light-emitting diode encapsulation, via plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Phys. Chem. Chem. Phys., 2016, 18, 1042-1049
Date:
2015-11-18
DOI:
http://dx.doi.org/10.1039/C5CP06713H

Author Information

Name Institution
Lae Ho KimPohang University of Science and Technology (POSTECH)
Yong Jin JeongPohang University of Science and Technology (POSTECH)
Tae Kyu AnKorea National University of Transportation
Seonuk ParkPohang University of Science and Technology (POSTECH)
Jin Hyuk JangPohang University of Science and Technology (POSTECH)
Sooji NamElectronics and Telecommunication Research Institute, (ETRI)
Jaeyoung JangHanyang University
Se Hyun KimYeungnam University
Chan Eon ParkPohang University of Science and Technology (POSTECH)

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 100C

Plasma TiO2

Hardware used: Unknown
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 100C

Film/Plasma Properties

Substrates

PEN, Polyethylene Napthalate

Notes

510