Publication Information

Title:
Effect of hydrogen plasma treatment on the passivation performance of TiOx on crystalline silicon prepared by atomic layer deposition
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 38, 022410 (2020)
Date:
2020-01-07

Author Information

Name Institution
Shinsuke MiyagawaNagoya University
Kazuhiro GotohNagoya University
Shohei OguraUniversity of Tokyo
Markus WildeUniversity of Tokyo
Yasuyoshi KurokawaNagoya University
Katsuyuki FukutaniUniversity of Tokyo
Noritaka UsamiNagoya University

Films



Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Lifetime
Analysis: Microwave Photoconductance Decay

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: NRA, Nuclear Reaction Analysis

Characteristic: Bonding States
Analysis: TDS, Thermal Desorption Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Substrates

Silicon

Keywords

Solar
Passivation

Notes

Thermal ALD TiO2 films with and without ex situ H2 plasma treatment
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