Publication Information

Title:
Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
Type:
Journal
Info:
ECS Journal of Solid State Science and Technology, 3 (6) P185-P191 (2014)
Date:
2014-04-18

Author Information

Name Institution
Gi-hee ChoPohang University of Science and Technology (POSTECH)
Shi-Woo RheePohang University of Science and Technology (POSTECH)

Films




Film/Plasma Properties

Characteristic: Work Function
Analysis: UPS, Ultraviolet Photoemission Spectroscopy

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

SiO2

Keywords

Gate Metal
PEALD Film Development

Notes

NH3 plasma gave decreasing GPC with increasing RF power, while H2/CH4 had increasing GPC with increasing RF power. NH3 grows film without plasma.
1000C 30s post deposition anneal and 450C 30min post metal anneal.
Page P186 discussion of why H2 plasma films have oxygen uptake when exposed to air.
91