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Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
Type:
Journal
Info:
ECS Journal of Solid State Science and Technology, 3 (6) P185-P191 (2014)
Date:
2014-04-18
Author Information
| Name | Institution |
|---|---|
| Gi-hee Cho | Pohang University of Science and Technology (POSTECH) |
| Shi-Woo Rhee | Pohang University of Science and Technology (POSTECH) |
Films
Film/Plasma Properties
Characteristic: Work Function
Analysis: UPS, Ultraviolet Photoemission Spectroscopy
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| SiO2 |
Notes
| NH3 plasma gave decreasing GPC with increasing RF power, while H2/CH4 had increasing GPC with increasing RF power. NH3 grows film without plasma. |
| 1000C 30s post deposition anneal and 450C 30min post metal anneal. |
| Page P186 discussion of why H2 plasma films have oxygen uptake when exposed to air. |
| 91 |