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Publication Information

Title: Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source

Type: Journal

Info: Journal of Applied Physics 120, 085315 (2016)

Date: 2016-07-19

DOI: http://dx.doi.org/10.1063/1.4960139

Author Information

Name

Institution

Grenoble Alps University (UGA)

Grenoble Alps University (UGA)

Grenoble Alps University (UGA)

Grenoble Alps University (UGA)

Grenoble Alps University (UGA)

Grenoble Alps University (UGA)

Films

Deposition Temperature Range = 100-300C

3275-24-9

7782-44-7

Deposition Temperature Range = 100-300C

3275-24-9

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

PANalytical Xpert PRO MPD X-ray Diffractometer

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Raman Spectroscopy

Horiba Jobin Yvon LabRAM HR800 Raman Spectroscope

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo VG-Scientific theta probe

Thickness

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MPD X-ray Diffractometer

Density

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MPD X-ray Diffractometer

Images

TEM, Transmission Electron Microscope

FEI Technai F20

Substrates

RuO2

Keywords

Reaction Mechanism

Notes

909



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