Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34(1) 2016
Date:
2015-11-10
DOI:
http://dx.doi.org/10.1116/1.4936227

Author Information

Name Institution
Małgorzata SowińskaBrandenburg University of Technology
Karsten HenkelBrandenburg University of Technology
Dieter SchmeißerBrandenburg University of Technology
Irina KärkkänenSentech Instruments GmbH
Jessica SchneidewindSentech Instruments GmbH
Franziska NaumannSentech Instruments GmbH
Bernd GruskaSentech Instruments GmbH
Hassan GargouriSentech Instruments GmbH

Films

Plasma TiON

Hardware used: SENTECH
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 170-300C

Plasma TiON

Hardware used: SENTECH
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 250-450C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: SENTECH SE800

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Custom

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4284A LCR Meter

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4284A LCR Meter

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Custom

Substrates

Si(001)

Notes

Oxygen in the TDMAT/N2 process comes from residual water and oxygen in the chamber.
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