Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy

Type:
Journal
Info:
Phys. Chem. Chem. Phys., 2018, 20, 180-190
Date:
2017-11-20
DOI:
http://dx.doi.org/10.1039/C7CP05373H

Author Information

Name Institution
M. WiesingUniversity of Paderborn
Teresa de los ArcosUniversity of Paderborn
Maximilian GebhardRuhr-University Bochum
Anjana DeviRuhr-University Bochum
G. GrundmeierUniversity of Paderborn

Films

Plasma Al2O3

Hardware used: Custom ECR
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 100C

Plasma TiO2

Hardware used: Custom ECR
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 100C

Film/Plasma Properties

Substrates

Notes

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