Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices

Type:
Journal
Info:
MRS Advances, Volume 3, Issue 51 (Energy Materials and Technologies) 2018 , pp. 3075-3084
Date:
2018-07-03

Author Information

Name Institution
Melissa M. McCarthyTyndall National Institute, University College Cork
Arnaud WalterCentre Suisse d'Electronique et de Microtechnique (CSEM)
Soo-Jin MoonCentre Suisse d'Electronique et de Microtechnique (CSEM)
Nakita K. NoelUniversity of Oxford
Shane O'BrienTyndall National Institute, University College Cork
Martin E. PembleTyndall National Institute, University College Cork
Sylvain NicolayCentre Suisse d'Electronique et de Microtechnique (CSEM)
Bernard WengerUniversity of Oxford
Henry J. SnaithUniversity of Oxford
Ian M. PoveyTyndall National Institute, University College Cork

Films



Thermal TiO2




Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Conductivity
Analysis: -

Characteristic: Wetting Angle
Analysis: Contact Angle Measurement

Characteristic: Optical Properties
Analysis: UV-VIS Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Open Circuit Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Short Circuit Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Fill Factor
Analysis: I-V, Current-Voltage Measurements

Characteristic: Power Conversion Efficiency
Analysis: I-V, Current-Voltage Measurements

Characteristic: Efficiency
Analysis: I-V, Current-Voltage Measurements

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Substrates

FTO, F:SnO2

Notes

1414