Atomic Layer Deposited Electron Transport Layers in Efficient Organometallic Halide Perovskite Devices

Type:
Journal
Info:
MRS Advances, Volume 3, Issue 51 (Energy Materials and Technologies) 2018 , pp. 3075-3084
Date:
2018-07-03
DOI:
http://dx.doi.org/10.1557/adv.2018.515

Author Information

Name Institution
Melissa M. McCarthyTyndall National Institute, University College Cork
Arnaud WalterCentre Suisse d'Electronique et de Microtechnique (CSEM)
Soo-Jin MoonCentre Suisse d'Electronique et de Microtechnique (CSEM)
Nakita K. NoelUniversity of Oxford
Shane O'BrienTyndall National Institute, University College Cork
Martin E. PembleTyndall National Institute, University College Cork
Sylvain NicolayCentre Suisse d'Electronique et de Microtechnique (CSEM)
Bernard WengerUniversity of Oxford
Henry J. SnaithUniversity of Oxford
Ian M. PoveyTyndall National Institute, University College Cork

Films

Thermal TiO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 185C

Plasma TiO2

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 185C

Thermal TiO2

Hardware used: Picosun R200
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 185C

Plasma TiO2

Hardware used: Picosun R200
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 185C

Thermal SnO2

Hardware used: Picosun R200
TDMASn, (Me2N)4Sn, [(CH3)2N]4Sn, Tetrakis(DiMethylAmido) Tin, Tin Dimethylamide
CAS#: 1066-77-9
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 185C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Philips X-pert APD

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: FEI Quanta 650 FEG

Characteristic: Conductivity
Analysis: -
Diagnostic: -

Characteristic: Wetting Angle
Analysis: Contact Angle Measurement
Diagnostic: Dataphysics OCA 20

Characteristic: Optical Properties
Analysis: UV-VIS Spectroscopy
Diagnostic: PerkinElmer lambda 900 Spectrophotometer

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Open Circuit Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Short Circuit Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Fill Factor
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Power Conversion Efficiency
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Efficiency
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

FTO, F:SnO2

Notes

1414