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Al2O3/TiO2 multilayer thin films grown by plasma enhanced atomic layer deposition for organic light-emitting diode passivation

Type:
Journal
Info:
Thin Solid Films 552 (2014) 155 - 158
Date:
2013-12-04
DOI:
http://dx.doi.org/10.1016/j.tsf.2013.12.003

Author Information

Name Institution
Dong-Suk HanHanyang University
Duck-Kyun ChoiHanyang University
Jong-Wan ParkHanyang University

Films

Plasma Al2O3

Hardware used: Custom ECR
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 40-100C

Plasma TiO2

Hardware used: Custom ECR
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 40-100C

Film/Plasma Properties

Characteristic: Water Vapor Transmission Rate (WVTR)
Analysis: Water Vapor Transmission Rate (WVTR)
Diagnostic: Mocon PERMATRAN-W Model 3/33

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Unknown
Analysis: Bending Test, Four Point Bend Delamination Test
Diagnostic: -

Characteristic: Water Vapor Transmission Rate (WVTR)
Analysis: OLED Illumination
Diagnostic: JBS International IVL300

Substrates

PES, Poly(Ether Sulfone)

Notes

568