Publication Information

Title: Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition

Type: Journal

Info: ACS Appl. Mater. Interfaces, 2014, 6 (9), pp 6731-6738

Date: 2014-04-08

DOI: http://dx.doi.org/10.1021/am500458d

Author Information

Name

Institution

Lae Ho Kim

Pohang University of Science and Technology (POSTECH)

Films

Plasma Al2O3 using Leintech LTSR-150

Deposition Temperature = 100C

TMA, Trimethyl Aluminum, Trimethylalane, Trimethylaluminium, Aluminium Trimethyl, Aluminum Trimethanide, Al(CH3)3, AlMe3, Al2(CH3)6, Al2Me6

75-24-1

Where to buy precursor

Oxygen, O2

7782-44-7

Plasma AlTixOy using Leintech LTSR-150

Deposition Temperature = 100C

TMA, Trimethyl Aluminum, Trimethylalane, Trimethylaluminium, Aluminium Trimethyl, Aluminum Trimethanide, Al(CH3)3, AlMe3, Al2(CH3)6, Al2Me6

75-24-1

Where to buy precursor

TDMAT, Tetrakis[(DiMethyl)Amido]Titanium, [Me2N]4Ti

3275-24-9

Where to buy precursor

Oxygen, O2

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

202


Mark Sowa

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