Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2014, 6 (9), pp 6731-6738
Date:
2014-04-08
DOI:
http://dx.doi.org/10.1021/am500458d

Author Information

Name Institution
Lae Ho KimPohang University of Science and Technology (POSTECH)

Films

Plasma Al2O3

Hardware used: Leintech LTSR-150
TMA, AlMe3, Trimethyl Aluminum
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 100C

Plasma AlTixOy

Hardware used: Leintech LTSR-150
TMA, AlMe3, Trimethyl Aluminum
CAS#: 75-24-1
Where to buy precursor
TDMATi, (Me2N)4Ti, [(CH3)2N]4Ti, Tetrakis (DiMethylAmido) Titanium, Titanium Dimethylamide
CAS#: 3275-24-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 100C

Film/Plasma Properties

Substrates

Keywords

Notes

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