Al2O3/TiO2 Nanolaminate Thin Film Encapsulation for Organic Thin Film Transistors via Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2014, 6 (9), pp 6731-6738
Date:
2014-04-08
DOI:
http://dx.doi.org/10.1021/am500458d

Author Information

Name Institution
Lae Ho KimPohang University of Science and Technology (POSTECH)

Films

Plasma Al2O3

Hardware used: Leintech LTSR-150
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 100C

Plasma AlTixOy

Hardware used: Leintech LTSR-150
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 100C

Film/Plasma Properties

Substrates

Keywords

Notes

202