Publication Information

Title:
Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition
Type:
Journal
Info:
Journal of The Electrochemical Society, 155 (9) H688-H692 (2008)
Date:
2008-06-05

Author Information

Name Institution
Qi XieFudan University
Jan MusschootGhent University
Davy DeduytscheGhent University
Ronald L. Van MeirhaegheGhent University
Christophe DetavernierGhent University
Sven Van den BergheSCK-CEN
Yu-Long JiangFudan University
Guo-Ping RuFudan University
Bing-Zong LiFudan University
Xin-Ping QuFudan University

Films




Plasma TiO2


Plasma TiO2


Thermal TiO2


Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction

Substrates

Si(100)

Keywords

Diffusion Barrier

Notes

Reports neither TDMAT or TTIP react with molecular O2 below thermal decomposition temperatures.
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