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Growth Kinetics and Crystallization Behavior of TiO2 Films Prepared by Plasma Enhanced Atomic Layer Deposition
Type:
Journal
Info:
Journal of The Electrochemical Society, 155 (9) H688-H692 (2008)
Date:
2008-06-05
Author Information
| Name | Institution |
|---|---|
| Qi Xie | Fudan University |
| Jan Musschoot | Ghent University |
| Davy Deduytsche | Ghent University |
| Ronald L. Van Meirhaeghe | Ghent University |
| Christophe Detavernier | Ghent University |
| Sven Van den Berghe | SCK-CEN |
| Yu-Long Jiang | Fudan University |
| Guo-Ping Ru | Fudan University |
| Bing-Zong Li | Fudan University |
| Xin-Ping Qu | Fudan University |
Films
Plasma TiO2
Plasma TiO2
Thermal TiO2
Plasma TiO2
Plasma TiO2
Thermal TiO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction
Substrates
| Si(100) |
Notes
| Reports neither TDMAT or TTIP react with molecular O2 below thermal decomposition temperatures. |
| 1339 |