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Area-Selective Atomic Layer Deposition of Two-Dimensional WS2 Nanolayers
In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry
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Publication Information
Title:
Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
Type:
Journal
Info:
Journal of Applied Physics 119, 244101 (2016)
Date:
2016-06-08
Author Information
| Name | Institution |
|---|---|
| M. Kassmi | Grenoble Alps University (UGA) |
| John Pointet | Grenoble Alps University (UGA) |
| Patrice Gonon | Grenoble Alps University (UGA) |
| Ahmad Bsiesy | Grenoble Alps University (UGA) |
| Christophe Vallée | Grenoble Alps University (UGA) |
| F. Jomni | El Manar University |
Films
Plasma AlTixOy
Film/Plasma Properties
Substrates
Keywords
Notes
| 834 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |