Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique

Type:
Journal
Info:
Journal of Applied Physics 119, 244101 (2016)
Date:
2016-06-08
DOI:
http://dx.doi.org/10.1063/1.4954314

Author Information

Name Institution
M. KassmiGrenoble Alps University (UGA)
John PointetGrenoble Alps University (UGA)
Patrice GononGrenoble Alps University (UGA)
Ahmad BsiesyGrenoble Alps University (UGA)
Christophe ValléeGrenoble Alps University (UGA)
F. JomniEl Manar University

Films

Plasma AlTixOy

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

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