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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Electrical and Corrosion Properties of Titanium Aluminum Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Journal of Materials Science & Technology Volume 33, Issue 3, Pages 295-299
Date:
2016-05-24
DOI:
https://doi.org/10.1016/j.jmst.2016.11.027

Author Information

Name Institution
Eun-Young YunPusan National University
Woo-Jae LeePusan National University
Qi Min WangGuangdong University of Technology
Se-Hun KwonPusan National University

Films

Plasma TiAlN

Hardware used: Unknown
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
Where to buy precursor
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: -
Diagnostic: -

Characteristic: Corrosion
Analysis: Potentiodynamic Polarization Test
Diagnostic: -

Substrates

Stainless Steel 316L

Notes

929