Publication Information

Title: Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric

Type: Journal

Info: APPLIED PHYSICS LETTERS 102, 173501 (2013)

Date: 2013-04-29

DOI: http://dx.doi.org/10.1063/1.4801979

Author Information

Name

Institution

University of Maryland

University of Maryland

University of Maryland

University of Maryland

University of Maryland

Films

Deposition Temperature = 250C

75-24-1

7732-18-5

Deposition Temperature = 250C

75-24-1

7789-20-0

Deposition Temperature = 250C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Leybold XRC-1000

Compositional Depth Profiling

TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

Unknown

Leakage Current

I-V, Current-Voltage Measurements

Keithley 2400 Source Meter

Breakdown Voltage

I-V, Current-Voltage Measurements

Keithley 2400 Source Meter

Dielectric Constant, Permittivity

I-V, Current-Voltage Measurements

Keithley 2400 Source Meter

Thickness

Ellipsometry

Sopra GES-5E

Substrates

Al

Keywords

Al2O3

Atomic Layer Deposition

Ozone

Dielectric Thin Films

Leakage Currents

Notes

Discuss Electron BackScatter Detection (EBSD) and Elastic Recoil Detection (ERD) but not sure what they were used for.

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