Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric

Type:
Journal
Info:
APPLIED PHYSICS LETTERS 102, 173501 (2013)
Date:
2013-04-29

Author Information

Name Institution
Alexander Campbell KozenUniversity of Maryland
Marshall A. SchroederUniversity of Maryland
Kevin D. OsbornUniversity of Maryland
C. J. LobbUniversity of Maryland
Gary W. RubloffUniversity of Maryland

Films

Thermal Al2O3



Plasma Al2O3


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Compositional Depth Profiling
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: I-V, Current-Voltage Measurements

Characteristic: Thickness
Analysis: Ellipsometry

Substrates

Al

Keywords

Al2O3
Atomic Layer Deposition
Ozone
Dielectric Thin Films
Leakage Currents

Notes

Discuss Electron BackScatter Detection (EBSD) and Elastic Recoil Detection (ERD) but not sure what they were used for.
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