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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Preparation of Al2O3 and AlN Nanotubes by Atomic Layer Deposition

Type:
Journal
Info:
MRS Proceedings, 1408, Mrsf11-1408-bb15-05. doi:10.1557/opl.2012.38
Date:
2012-01-11
DOI:
http://dx.doi.org/10.1557/opl.2012.38

Author Information

Name Institution
Çağla ÖzgitBilkent University
Fatma KayaciBilkent University
İnci DönmezBilkent University
Engin CagatayBilkent University
Tamer UyarBilkent University
Necmi BiyikliBilkent University

Films

Plasma AlN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: FEI Quanta 200 FEG

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Tecnai G2 F30

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Tecnai G2 F30

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: FEI Tecnai G2 F30

Substrates

Nylon 6,6

Notes

1370