Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films

Type:
Journal
Info:
JOURNAL OF APPLIED PHYSICS 117, 155101 (2015)
Date:
2015-04-02

Author Information

Name Institution
Halit AltuntasCankiri Karatekin University
Çağla ÖzgitBilkent University
İnci DönmezBilkent University
Necmi BiyikliBilkent University

Films

Plasma AlN


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Current Density
Analysis: I-V, Current-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Effective Charge Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Threshold Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Unknown
Analysis: XRR, X-Ray Reflectivity

Substrates

Si(100)

Keywords

Notes

315