Publication Information

Title:
Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
Type:
Conference Proceedings
Info:
ECS Trans. 2010 volume 33, issue 2, 177-182
Date:
2010-10-12

Author Information

Name Institution
Eric W. DegunsCambridge NanoTech
Mark J. SowaCambridge NanoTech
Mark J. DalberthCambridge NanoTech
Ritwik BhatiaCambridge NanoTech
Ravi KanjoliaSAFC Hitech
Daniel MoserSAFC Hitech
Ganesh M. SundaramCambridge NanoTech
Jill S. BeckerCambridge NanoTech

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry

Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis

Substrates

Silicon

Keywords

Notes

Vapor pressure formula provided for the Nb precursor used.
System had Entegris gas purifiers on Ar, N2, and O2 gas lines.
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