Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy

Type:
Journal
Info:
Japanese Journal of Applied Physics 56, 04CG07 (2017)
Date:
2016-12-28
DOI:
https://doi.org/10.7567/JJAP.56.04CG07

Author Information

Name Institution
Kenji ItohToyota Central Research and Development Laboratories
Daigo KikutaToyota Central Research and Development Laboratories
Tetsuo NaritaToyota Central Research and Development Laboratories
Keita KataokaToyota Central Research and Development Laboratories
Noritake IsomuraToyota Central Research and Development Laboratories
Kousuke KitazumiToyota Central Research and Development Laboratories
Tomohiko MoriToyota Central Research and Development Laboratories

Films

Plasma AlSixOy

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, trimethyl aluminum, AlMe3
CAS#: 75-24-1
Where to buy precursor
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Band Gap
Analysis: HAXPES, Hard X-Ray Photoelectron Spectroscopy
Diagnostic: VG-Scienta R4000 electron spectrometer

Characteristic: Valence Band
Analysis: HAXPES, Hard X-Ray Photoelectron Spectroscopy
Diagnostic: VG-Scienta R4000 electron spectrometer

Substrates

GaN
Silicon

Keywords

Notes

986