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Publication Information

Title: Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy

Type: Journal

Info: Japanese Journal of Applied Physics 56, 04CG07 (2017)

Date: 2016-12-28

DOI: https://doi.org/10.7567/JJAP.56.04CG07

Author Information

Name

Institution

Toyota Central Research and Development Laboratories

Toyota Central Research and Development Laboratories

Toyota Central Research and Development Laboratories

Toyota Central Research and Development Laboratories

Toyota Central Research and Development Laboratories

Toyota Central Research and Development Laboratories

Toyota Central Research and Development Laboratories

Films

Deposition Temperature = 250C

75-24-1

15112-89-7

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Band Gap

HAXPES, Hard X-Ray Photoelectron Spectroscopy

VG-Scienta R4000 electron spectrometer

Valence Band

HAXPES, Hard X-Ray Photoelectron Spectroscopy

VG-Scienta R4000 electron spectrometer

Substrates

GaN

Silicon

Keywords

Notes

986


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