Publication Information

Title:
Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
Type:
Journal
Info:
Japanese Journal of Applied Physics 56, 04CG07 (2017)
Date:
2016-12-28

Author Information

Name Institution
Kenji ItohToyota Central Research and Development Laboratories
Daigo KikutaToyota Central Research and Development Laboratories
Tetsuo NaritaToyota Central Research and Development Laboratories
Keita KataokaToyota Central Research and Development Laboratories
Noritake IsomuraToyota Central Research and Development Laboratories
Kousuke KitazumiToyota Central Research and Development Laboratories
Tomohiko MoriToyota Central Research and Development Laboratories

Films


Film/Plasma Properties

Characteristic: Band Gap
Analysis: HAXPES, Hard X-Ray Photoelectron Spectroscopy

Characteristic: Valence Band
Analysis: HAXPES, Hard X-Ray Photoelectron Spectroscopy

Substrates

GaN
Silicon

Keywords

Notes

986