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Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology
Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures
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Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
Type:
Journal
Info:
Japanese Journal of Applied Physics 56, 04CG07 (2017)
Date:
2016-12-28
Author Information
| Name | Institution |
|---|---|
| Kenji Itoh | Toyota Central Research and Development Laboratories |
| Daigo Kikuta | Toyota Central Research and Development Laboratories |
| Tetsuo Narita | Toyota Central Research and Development Laboratories |
| Keita Kataoka | Toyota Central Research and Development Laboratories |
| Noritake Isomura | Toyota Central Research and Development Laboratories |
| Kousuke Kitazumi | Toyota Central Research and Development Laboratories |
| Tomohiko Mori | Toyota Central Research and Development Laboratories |
Films
Plasma AlSixOy
Film/Plasma Properties
Characteristic: Band Gap
Analysis: HAXPES, Hard X-Ray Photoelectron Spectroscopy
Characteristic: Valence Band
Analysis: HAXPES, Hard X-Ray Photoelectron Spectroscopy
Substrates
| GaN |
| Silicon |
Keywords
Notes
| 986 |