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Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy
Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition
Optimization of Y2O3 dopant concentration of yttria stabilized zirconia thin film electrolyte prepared by plasma enhanced atomic layer deposition for high performance thin film solid oxide fuel cells
Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Band offset of Al1-xSixOy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy
Type:
Journal
Info:
Japanese Journal of Applied Physics 56, 04CG07 (2017)
Date:
2016-12-28
Author Information
| Name | Institution |
|---|---|
| Kenji Itoh | Toyota Central Research and Development Laboratories |
| Daigo Kikuta | Toyota Central Research and Development Laboratories |
| Tetsuo Narita | Toyota Central Research and Development Laboratories |
| Keita Kataoka | Toyota Central Research and Development Laboratories |
| Noritake Isomura | Toyota Central Research and Development Laboratories |
| Kousuke Kitazumi | Toyota Central Research and Development Laboratories |
| Tomohiko Mori | Toyota Central Research and Development Laboratories |
Films
Plasma AlSixOy
Film/Plasma Properties
Characteristic: Band Gap
Analysis: HAXPES, Hard X-Ray Photoelectron Spectroscopy
Characteristic: Valence Band
Analysis: HAXPES, Hard X-Ray Photoelectron Spectroscopy
Substrates
| GaN |
| Silicon |
Keywords
Notes
| 986 |