Plasma-enhanced atomic layer deposition of tungsten nitride

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 051516 (2016)
Date:
2016-08-12
DOI:
http://dx.doi.org/10.1116/1.4961567

Author Information

Name Institution
Mark J. SowaCambridge NanoTech
Yonas YemaneStanford University
Fritz B. PrinzStanford University
J ProvineStanford University

Films

Plasma WN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
BTBMW, TBIDMW, bis(t-Butylimido) bis(DiMethylamido) Tungsten
CAS#: 406462-43-9
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature Range = 100-400C

Plasma WN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
BTBMW, TBIDMW, bis(t-Butylimido) bis(DiMethylamido) Tungsten
CAS#: 406462-43-9
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 250C

Plasma WN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
BTBMW, TBIDMW, bis(t-Butylimido) bis(DiMethylamido) Tungsten
CAS#: 406462-43-9
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 100-400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Horiba Jobin Yvon UVISEL

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: Horiba Jobin Yvon UVISEL

Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Diagnostic: Horiba Jobin Yvon UVISEL

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: Lucas Labs 302

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI VersaProbe 5000

Substrates

Si(100)
SiO2

Notes

901