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Critical-point model dielectric function analysis of WO₃ thin films deposited by atomic layer deposition techniques

Type:

Journal

Info:

Journal of Applied Physics 124, 115302 (2018)

Date:

2018-08-01

DOI:

http://dx.doi.org/10.1063/1.5038746

Author Information

Name	Institution
Ufuk Kılıç	University of Nebraska
Derek Sekora	University of Nebraska
Alyssa Mock	University of Nebraska
Rafał Korlacki	University of Nebraska
Shah Valloppilly	University of Nebraska
Elena M. Echeverrı́a	University of Nebraska
Natale Ianno	University of Nebraska
Eva Schubert	University of Nebraska
Mathias Schubert	University of Nebraska

Films

Other WO₃

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji

BTBMW, TBIDMW, bis(t-Butylimido) bis(DiMethylamido) Tungsten

CAS#: 406462-43-9

CAS#: 7732-18-5

CAS#: 7782-44-7

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities

Analysis: XPS, X-ray Photoelectron Spectroscopy

Diagnostic: -

Characteristic: Optical Properties

Analysis: Ellipsometry

Diagnostic: J.A. Woollam RC2

Characteristic: Morphology, Roughness, Topography

Analysis: Ellipsometry

Diagnostic: J.A. Woollam VUV-SE

Characteristic: Morphology, Roughness, Topography

Analysis: AFM, Atomic Force Microscopy

Diagnostic: Digital Instruments Nanoscope III

Substrates

Si(100)

Notes

1417