Critical-point model dielectric function analysis of WO3 thin films deposited by atomic layer deposition techniques

Type:
Journal
Info:
Journal of Applied Physics 124, 115302 (2018)
Date:
2018-08-01
DOI:
http://dx.doi.org/10.1063/1.5038746

Author Information

Name Institution
Ufuk KılıçUniversity of Nebraska
Derek SekoraUniversity of Nebraska
Alyssa MockUniversity of Nebraska
Rafał KorlackiUniversity of Nebraska
Shah ValloppillyUniversity of Nebraska
Elena M. Echeverrı́­aUniversity of Nebraska
Natale IannoUniversity of Nebraska
Eva SchubertUniversity of Nebraska
Mathias SchubertUniversity of Nebraska

Films

Other WO3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
BTBMW, TBIDMW, bis(t-Butylimido) bis(DiMethylamido) Tungsten
CAS#: 406462-43-9
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Optical Properties
Analysis: Ellipsometry
Diagnostic: J.A. Woollam RC2

Characteristic: Morphology, Roughness, Topography
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VUV-SE

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Digital Instruments Nanoscope III

Substrates

Si(100)

Notes

1417