Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions

Type:
Journal
Info:
Applied Physics Letters 119, 042901 (2021)
Date:
2021-07-14

Author Information

Name Institution
Subhajit MohantyUniversity of Michigan
Islam SayedUniversity of California - Santa Barbara (UCSB)
Zhe (Ashley) JianUniversity of Michigan
Umesh MishraUniversity of Michigan
Elaheh AhmadiUniversity of Michigan

Films



Film/Plasma Properties

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

GaN

Notes

1630