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Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping

Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2012, 4 (7), pp 3471-3475
Date:
2012-06-11
DOI:
http://dx.doi.org/10.1021/am300551y

Author Information

Name Institution
Jui-Fen ChienNational Taiwan University
Ching-Hsiang ChenProtrustech Corporation Limited
Jing-Jong ShyueNational Taiwan University
Miin-Jang ChenNational Taiwan University

Films

Other ZnON

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
H2O, Water
CAS#: 7732-18-5
NH3, Ammonia
CAS#: 7664-41-7
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 180C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI VersaProbe 5000

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI VersaProbe 5000

Characteristic: Bonding States
Analysis: X-ray Absorption Spectroscopy
Diagnostic: Synchrotron

Characteristic: Carrier Concentration
Analysis: Hall effect/van der Pauw method
Diagnostic: Ecopia HMS-3000

Characteristic: Mobility
Analysis: Hall effect/van der Pauw method
Diagnostic: Ecopia HMS-3000

Characteristic: Conductivity Type
Analysis: Hall effect/van der Pauw method
Diagnostic: Ecopia HMS-3000

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Diagnostic: Custom

Substrates

Sapphire

Notes

654