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Publication Information

Title: Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation

Type: Journal

Info: Acta Materialia 117 (2016) 153 - 159

Date: 2016-07-06

DOI: http://dx.doi.org/10.1016/j.actamat.2016.07.018

Author Information

Name

Institution

Stanford University

Stanford University

Stanford University

Stanford University

Stanford University

Stanford University

Stanford University

Films

Plasma BaO using Custom

Deposition Temperature = 250C

210758-43-3

7782-44-7

Plasma TiO2 using Custom

Deposition Temperature = 250C

546-68-9

7782-44-7

Plasma BaTiO3 using Custom

Deposition Temperature = 250C

210758-43-3

546-68-9

7782-44-7

Plasma Al:BaTiO3 using Custom

Deposition Temperature = 250C

75-24-1

210758-43-3

546-68-9

7782-44-7

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

Unknown

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Unknown

Unknown

Leakage Current

I-V, Current-Voltage Measurements

Unknown

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Unknown

Substrates

Keywords

Doping

High-k Dielectric Thin Films

Notes

961



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