Publication Information

Title:
Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 9, PP. 1115-1117, 2013
Date:
2013-08-06

Author Information

Name Institution
Andrew D. KoehlerU.S. Naval Research Laboratory
Neeraj NepalU.S. Naval Research Laboratory
Travis J. AndersonU.S. Naval Research Laboratory
Marko J. TadjerU.S. Naval Research Laboratory
Karl D. HobartU.S. Naval Research Laboratory
Charles R. Eddy, Jr.U.S. Naval Research Laboratory
Francis J. KubU.S. Naval Research Laboratory

Films

Plasma AlN


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Substrates

AlGaN

Keywords

Passivation

Notes

580