Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 9, PP. 1115-1117, 2013
Date:
2013-08-06
Author Information
| Name | Institution |
|---|---|
| Andrew D. Koehler | U.S. Naval Research Laboratory |
| Neeraj Nepal | U.S. Naval Research Laboratory |
| Travis J. Anderson | U.S. Naval Research Laboratory |
| Marko J. Tadjer | U.S. Naval Research Laboratory |
| Karl D. Hobart | U.S. Naval Research Laboratory |
| Charles R. Eddy, Jr. | U.S. Naval Research Laboratory |
| Francis J. Kub | U.S. Naval Research Laboratory |
Films
Plasma AlN
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Substrates
| AlGaN |
Notes
| 580 |