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Area-Selective Atomic Layer Deposition of Two-Dimensional WS2 Nanolayers
In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry
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Publication Information
Title:
Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 9, PP. 1115-1117, 2013
Date:
2013-08-06
Author Information
| Name | Institution |
|---|---|
| Andrew D. Koehler | U.S. Naval Research Laboratory |
| Neeraj Nepal | U.S. Naval Research Laboratory |
| Travis J. Anderson | U.S. Naval Research Laboratory |
| Marko J. Tadjer | U.S. Naval Research Laboratory |
| Karl D. Hobart | U.S. Naval Research Laboratory |
| Charles R. Eddy, Jr. | U.S. Naval Research Laboratory |
| Francis J. Kub | U.S. Naval Research Laboratory |
Films
Plasma AlN
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Substrates
| AlGaN |
Keywords
| Passivation |
Notes
| 580 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |