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Properties and Mechanism of PEALD-In2O3 Thin Films Prepared by Different Precursor Reaction Energy
Uniformity of HfO2 Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition
Optimization of Y2O3 dopant concentration of yttria stabilized zirconia thin film electrolyte prepared by plasma enhanced atomic layer deposition for high performance thin film solid oxide fuel cells
Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 9, PP. 1115-1117, 2013
Date:
2013-08-06
Author Information
| Name | Institution |
|---|---|
| Andrew D. Koehler | U.S. Naval Research Laboratory |
| Neeraj Nepal | U.S. Naval Research Laboratory |
| Travis J. Anderson | U.S. Naval Research Laboratory |
| Marko J. Tadjer | U.S. Naval Research Laboratory |
| Karl D. Hobart | U.S. Naval Research Laboratory |
| Charles R. Eddy, Jr. | U.S. Naval Research Laboratory |
| Francis J. Kub | U.S. Naval Research Laboratory |
Films
Plasma AlN
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Substrates
| AlGaN |
Keywords
| Passivation |
Notes
| 580 |