Search Plasma ALD Publication Database By...

Publication Information

Title: Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation

Type: Journal

Info: IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 9, PP. 1115-1117, 2013

Date: 2013-08-06

DOI: http://dx.doi.org/10.1109/LED.2013.2274429

Author Information

Name

Institution

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

Films

Deposition Temperature Range N/A

75-24-1

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Substrates

AlGaN

Keywords

Passivation

Notes

580



Shortcuts



© 2014-2018 plasma-ald.com