Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation

Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 9, PP. 1115-1117, 2013
Date:
2013-08-06
DOI:
http://dx.doi.org/10.1109/LED.2013.2274429

Author Information

Name Institution
Andrew D. KoehlerU.S. Naval Research Laboratory
Neeraj NepalU.S. Naval Research Laboratory
Travis J. AndersonU.S. Naval Research Laboratory
Marko J. TadjerU.S. Naval Research Laboratory
Karl D. HobartU.S. Naval Research Laboratory
Charles R. Eddy, Jr.U.S. Naval Research Laboratory
Francis J. KubU.S. Naval Research Laboratory

Films

Plasma AlN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, trimethyl aluminum, AlMe3
CAS#: 75-24-1
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Substrates

AlGaN

Keywords

Passivation

Notes

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