Title: Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation
Type: Journal
Info: IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 9, PP. 1115-1117, 2013
Date: 2013-08-06
DOI: http://dx.doi.org/10.1109/LED.2013.2274429
Name
Institution
U.S. Naval Research Laboratory
U.S. Naval Research Laboratory
U.S. Naval Research Laboratory
U.S. Naval Research Laboratory
U.S. Naval Research Laboratory
U.S. Naval Research Laboratory
U.S. Naval Research Laboratory
Characteristic
Analysis
Diagnostic
Crystallinity, Crystal Structure, Grain Size, Atomic Structure
XRD, X-Ray Diffraction
-
AlGaN
Passivation
580
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