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Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation

Type:

Journal

Info:

IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 9, PP. 1115-1117, 2013

Date:

2013-08-06

DOI:

http://dx.doi.org/10.1109/LED.2013.2274429

Author Information

Name	Institution
Andrew D. Koehler	U.S. Naval Research Laboratory
Neeraj Nepal	U.S. Naval Research Laboratory
Travis J. Anderson	U.S. Naval Research Laboratory
Marko J. Tadjer	U.S. Naval Research Laboratory
Karl D. Hobart	U.S. Naval Research Laboratory
Charles R. Eddy, Jr.	U.S. Naval Research Laboratory
Francis J. Kub	U.S. Naval Research Laboratory

Films

Plasma AlN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji

TMA, Trimethylaluminum, Trimethylalumane, AlMe₃, Al(CH₃)₃

CAS#: 75-24-1

CAS#: 7727-37-9

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Analysis: XRD, X-Ray Diffraction

Diagnostic: -

Substrates

AlGaN

Notes

580