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DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air

Type:
Journal
Info:
2016 Semicond. Sci. Technol. 31, 115017
Date:
2016-09-06
DOI:
https://doi.org/10.1088/0268-1242/31/11/115017

Author Information

Name Institution
Ateeq J. SuriaStanford University
Ananth Saran YalamarthyStanford University
Hongyun SoStanford University
Debbie G. SeneskyStanford University

Films

Plasma Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Etch Rate
Analysis: Wet Etch
Diagnostic: Custom

Substrates

GaN
Ni/Au

Notes

851