DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
Type:
Journal
Info:
2016 Semicond. Sci. Technol. 31, 115017
Date:
2016-09-06
Author Information
| Name | Institution |
|---|---|
| Ateeq J. Suria | Stanford University |
| Ananth Saran Yalamarthy | Stanford University |
| Hongyun So | Stanford University |
| Debbie G. Senesky | Stanford University |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Characteristic: Etch Rate
Analysis: Wet Etch
Substrates
| GaN |
| Ni/Au |
Notes
| 851 |