Publication Information

Title:
DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
Type:
Journal
Info:
2016 Semicond. Sci. Technol. 31, 115017
Date:
2016-09-06

Author Information

Name Institution
Ateeq J. SuriaStanford University
Ananth Saran YalamarthyStanford University
Hongyun SoStanford University
Debbie G. SeneskyStanford University

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Characteristic: Etch Rate
Analysis: Wet Etch

Substrates

GaN
Ni/Au

Keywords

Gate Dielectric
Passivation

Notes

851