The publication database currently has 1695 entries.
Use Advanced Search for more complex searches
Recent Database Additions
Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
Gallium nitride thin films by microwave plasma-assisted ALD
Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
Type:
Journal
Info:
2016 Semicond. Sci. Technol. 31, 115017
Date:
2016-09-06
Author Information
| Name | Institution |
|---|---|
| Ateeq J. Suria | Stanford University |
| Ananth Saran Yalamarthy | Stanford University |
| Hongyun So | Stanford University |
| Debbie G. Senesky | Stanford University |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Characteristic: Etch Rate
Analysis: Wet Etch
Substrates
| GaN |
| Ni/Au |
Notes
| 851 |