Publication Information

Title: In situ x-ray photoelectron emission analysis of the thermal stability of atomic layer deposited WOx as hole-selective contacts for Si solar cells

Type: Journal

Info: Journal of Vacuum Science & Technology A 36, 031601 (2018)

Date: 2018-02-21

DOI: http://dx.doi.org/10.1116/1.5020339

Author Information

Name

Institution

University of New South Wales

University of New South Wales

University of New South Wales

University of New South Wales

University of New South Wales

University of New South Wales

Films

Deposition Temperature = 200C

406462-43-9

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Refractive Index

Ellipsometry

J.A. Woollam M-2000V

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific ESCA LAB 250 XPS Spectrometer

Chemical Composition, Impurities

UPS, Ultraviolet Photoemission Spectroscopy

Thermo Scientific ESCA LAB 250 XPS Spectrometer

Chemical Composition, Impurities

TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

ION TOF TofSIMS 5

Chemical Composition, Impurities

FTIR, Fourier Transform InfraRed spectroscopy

Thermo Fisher Nicolet 5700

Lifetime

QSSPC, Quasi-Steady-State PhotoConductance Decay

Sinton WCT-120 Lifetime Tester

Images

TEM, Transmission Electron Microscope

-

Thickness

TEM, Transmission Electron Microscope

-

Substrates

Silicon

Keywords

Solar

Notes

1289



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