Publication Information

Title:
In situ x-ray photoelectron emission analysis of the thermal stability of atomic layer deposited WOx as hole-selective contacts for Si solar cells
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 031601 (2018)
Date:
2018-02-21

Author Information

Name Institution
Tian ZhangUniversity of New South Wales
Chang-Yeh LeeUniversity of New South Wales
Bin GongUniversity of New South Wales
Sean LimUniversity of New South Wales
Stuart WenhamUniversity of New South Wales
Bram HoexUniversity of New South Wales

Films


Film/Plasma Properties

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: UPS, Ultraviolet Photoemission Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Lifetime
Analysis: QSSPC, Quasi-Steady-State PhotoConductance Decay

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Substrates

Silicon

Keywords

Solar

Notes

1289