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In situ x-ray photoelectron emission analysis of the thermal stability of atomic layer deposited WOx as hole-selective contacts for Si solar cells
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 031601 (2018)
Date:
2018-02-21
Author Information
| Name | Institution |
|---|---|
| Tian Zhang | University of New South Wales |
| Chang-Yeh Lee | University of New South Wales |
| Bin Gong | University of New South Wales |
| Sean Lim | University of New South Wales |
| Stuart Wenham | University of New South Wales |
| Bram Hoex | University of New South Wales |
Films
Plasma WO3
Film/Plasma Properties
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: UPS, Ultraviolet Photoemission Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Lifetime
Analysis: QSSPC, Quasi-Steady-State PhotoConductance Decay
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Substrates
| Silicon |
Notes
| 1289 |